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工作原理 Working principle 编辑 edit 传感器模块采用全焊接技术，内部拥有一个整体化的过载膜片，一个压力传感器和一个温度传感器。温度传感器作为温度补偿的参考值。压力传感器的正压侧与传感器膜盒的高压腔相连，传感器的负压侧与传感器膜盒的低压腔相连，压力通过隔离膜片和填充液，传递给传感器内的硅芯片，使压力传感器的芯片的阻值发生变化，从而导致检测系统输出电压变化。该输出电压与压力变化成正比，再由适配单元和放大器转化成一标准化信号输出。[3] The sensor module uses full welding technology, with a holistic overloading diaphragm, a pressure sensor and a temperature sensor. The temperature sensor is used as the reference value of the temperature compensation. The high pressure chamber side and positive pressure sensor diaphragm pressure sensor connected to the low pressure chamber negative pressure side and the sensor film box is connected with the pressure sensor, through the diaphragm and liquid filling, transfer to the silicon chip inside the sensor, the pressure sensor chip resistance changes, which lead to the change of output voltage detection system. The output voltage is proportional to the pressure change, and then the adaptation unit and the amplifier are converted into a standardized signal output. [3] 单晶硅压阻式压力传感器工作原理 Working principle of piezoresistive pressure sensor of monocrystalline silicon 压阻式压力传感器利用单晶硅的压阻效应而构成。采用单晶硅片为弹性元件，在单晶硅膜片上利用集成电路的工艺，在单晶硅的特定方向扩散一组等值电阻，并将电阻接成桥路，单晶硅片置于传感器腔内。 The piezoresistive pressure sensor is made up of the piezoresistive effect of monocrystalline silicon. Using monocrystalline silicon wafer as an elastic element and using integrated circuit technology on monocrystalline silicon diaphragm, a set of equivalent resistance is diffused in the specific direction of monocrystalline silicon, and the resistance is connected to the bridge path, and the single crystal silicon is placed in the sensor cavity. 单晶硅压力变送器 Monocrystalline silicon pressure transmitter 单晶硅压力变送器 Monocrystalline silicon pressure transmitter 当压力发生变化时，单晶硅产生应变，使直接扩散在上面的应变电阻产生与被测压力成比例的变化，再由桥式电路获得相应的电压输出信号。 When the pressure changes, monocrystalline silicon produces strain, so that the strain resistance directly diffused on the above surface changes proportionally with the measured pressure, and then the corresponding voltage output signal is obtained by the bridge circuit.